Highly tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band

Abstract

We report on the design, fabrication and performance of the first hetero-integrated III-V on silicon sampled-grating distributed Bragg reflector lasers (SGDBR) operating in the O-band and based on direct bonding and adiabatic coupling. Two devices with different geometric parameters are presented both showing an output power in the Si waveguide as high as 7.5 mW and a continuous tuning range of 27 and 35 nm respectively with a side mode suppression ration higher than 35 dB.