Side gate HiGT with low dv/dt noise and low loss

Abstract

This paper presents a novel side gate HiGT (High-conductivity IGBT) that incorporates historical changes of gate structures for planar and trench gate IGBTs. Side gate HiGT has a side-wall gate, and the opposite side of channel region for side-wall gate is covered by a thick oxide layer to reduce Miller capacitance (Cres). In addition, side gate HiGT has no floating p-layer, which causes the excess Vge overshoot. The proposed side gate HiGT has 75% smaller Cres than the conventional trench gate IGBT. The excess Vge overshoot during turn-on is effectively suppressed, and Eon + Err can be reduced by 34% at the same diode's recovery dv/dt. Furthermore, side gate HiGT has sufficiently rugged RBSOA and SCSOA.