The second-generation 600V RC-IGBT with optimized FWD

Abstract

A Reverse Conducting IGBT (RC-IGBT) is a promising device to reduce a size and cost of the power module thanks to the integration of IGBT and FWD into a single chip. However, it is difficult to achieve well-balanced performance between IGBT and FWD. Indeed, the total inverter loss of the conventional RC-IGBT was not so small as the individual IGBT and FWD pair. To minimize the loss, the most important key is the improvement of reverse recovery characteristics of FWD. We carefully extracted five effective parameters to improve the FWD characteristics, and investigated the impact of these parameters by using simulation and experiments. Finally, optimizing these parameters, we succeeded in fabricating the second-generation 600V class RC-IGBT with a smaller FWD loss than the first-generation RC-IGBT.