An identity related to centralizers in semiprime rings

Abstract

The paper presents effect of low temperature upon location of selected Raman bands. The structural properties of pure zirconium pre-oxidized at 773K and 873K have been studied during cooling in the range of temperatures 273K and 93K by Raman spectroscopy. Analysis of the Raman band positions for the monoclinic phase of zirconia oxide was performed. Raman spectroscopy has shown that monoclinic phase of zirconia oxide undergoes a continuous band displacement, individual for each studied Raman mode. Registered shift is aimed towards the high frequency direction. Recorded Raman band displacement was employed to study stress state in zirconia oxide films grown on pure zirconium developed during control cooling. Presented results showed a good correlation between different thicknesses of the oxide scale.