Performance Upper Limit of sub‐10 nm Monolayer MoS₂ Transistors

Abstract

Field‐effect transistors (FETs) fabricated with monolayer (ML) molybdenum disulfide (MoS 2 ) have shown promising potential as a candidate of next‐generation nanoelectronic devices. The first first‐principles quantum transport investigation of the ballistic performance upper limit of sub‐10 nm ML MoS 2 FETs with Ti electrode is provided. An extraordinary small subthreshold swing is obtained by taking advantage of a dual gate (DG) configuration. The ballistic performance upper limits of the sub‐10 nm ML MoS 2 DGFETs are comparable with the best existing sub‐10 nm advanced silicon FETs. The 10 nm ML MoS 2 DGFET can satisfy 35% and 54% requirement of the on‐state current of high performance and low power FETs of the next decade in the International Technology Roadmap for Semiconductors 2013, respectively.