High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer

Abstract

High-performance MoS₂ transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS₂ . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.