Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107

Abstract

High-speed and high-accuracy pumping of a single electron is crucial for realizing an accurate current source, which is a promising candidate for a quantum current standard. Here, using a high-accuracy measurement system traceable to primary standards, we evaluate the accuracy of a Si tunable-barrier single-electron pump driven by a single sinusoidal signal. The pump operates at frequencies up to 6.5 GHz, producing a current of more than 1 nA. At 1 GHz, the current plateau with a level of about 160 pA is found to be accurate to better than 0.92 ppm (parts per million), which is a record value for 1-GHz operation. At 2 GHz, the current plateau offset from 1ef (∼320 pA) by 20 ppm is observed. The current quantization accuracy is improved by applying a magnetic field of 14 T, and we observe a current level of 1ef with an accuracy of a few ppm. The presented gigahertz single-electron pumping with a high accuracy is an important step towards a metrological current standard.