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Electronic structure of InAs(1¯ 1¯ 1¯)2×2 and InSb(1¯ 1¯ 1¯)2×2 studied by angle-resolved photoelectron spectroscopy
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Citations
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References
1996
Year
SemiconductorsIi-vi SemiconductorElectronic DevicesEngineeringElectronic MaterialsPhysicsSurface ScienceApplied PhysicsCondensed Matter PhysicsQuantum MaterialsSurface-related StructuresMolecular Beam EpitaxyElectronic StructureCompound SemiconductorAngle-resolved Photoelectron SpectroscopySemiconductor Nanostructures
The electronic structure of molecular-beam-epitaxy-grown InAs(1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{})2\ifmmode\times\else\texttimes\fi{}2 and InSb(1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{})2\ifmmode\times\else\texttimes\fi{}2 surfaces is investigated by angle-resolved photoelectron spectroscopy. Valence-band spectra, and dispersions of five surface-related structures, are presented. The qualitative similarities of data from the two surfaces indicate that they are very similar, with respect to atomic and electronic structure. Comparisons with other (111) surfaces support the identification of the surface-related structures. \textcopyright{} 1996 The American Physical Society.
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