Publication | Closed Access
Scaling of the (√3 × √3 )<i>R</i>30° domain-size distribution with coverage for Ag/Si(111)
55
Citations
13
References
1991
Year
Epitaxial GrowthEngineeringPhysicsSize DistributionDomain-size DistributionApplied PhysicsQuantum MaterialsCondensed Matter PhysicsPower Growth LawSemiconductor MaterialMicroelectronics√3 × √3Semiconductor Nanostructures
The evolution of the (\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 )R30\ifmmode^\circ\else\textdegree\fi{} domain-size distribution with coverage for Ag on Si(111) has been studied by high-resolution low-energy electron diffraction. Scaling of the size distribution, which can be fitted by a gamma distribution, is observed. A temperature dependence of the exponent n describing a power growth law for mean size versus coverage is found where n decreases with decreasing deposition temperature. By introducing a simple relation, q+nd=1, where the dimensionality d=2 and q is an exponent describing the power law for domain density versus coverage, the behavior of n is explained in terms of the experimentally observed behavior of q.
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