1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/30036bedc5269936.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/cd5e572bc3e4eb92.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/d4ac9dcf27f6ff52.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T526, In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) $\hbox{Al}_{2}\hbox{O}_{3}$, $ \hbox{HfO}_{2}$, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over $\hbox{Al}_{2}\hbox{O}_{3}$ or $\hbox{HfO}_{2}$ on GaAs, and it is attributed to the reduction of the Ga–O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500 $^{\circ}\hbox{C}$. It is found that PDA, at above 500 $^{\circ}\hbox{C}$, causes a significant amount of Ga and As out-diffusion into the high-$\kappa$ dielectric, which degrades the interface, as well as bulk high-$\kappa$ properties.

	Year	Citations

References