Ultraflexible and ultrathin polymeric gate insulator for 2 V organic transistor circuits

Abstract

Abstract We have developed a high-yield process for fabricating organic transistors with ultraflexible and ultrathin polymeric (parylene) insulators. In a top-contact bottom-gate configuration, an oxygen plasma treatment for a Au gate surface before parylene deposition significantly improved the yield of transistors, enabling the parylene thickness to be reduced to 18 nm. Taking full advantage of the ultraflexible and ultrathin insulator, we have demonstrated 2 V ring oscillator circuits, where the yield was 97% for 360 transistors inside the area of 7 × 7 cm 2 . The highly reliable ultrathin insulator is useful for large-area circuits with low-voltage organic transistors.