Publication | Closed Access
High‐Performance 2D Rhenium Disulfide (ReS<sub>2</sub>) Transistors and Photodetectors by Oxygen Plasma Treatment
253
Citations
40
References
2016
Year
EngineeringOptoelectronic DevicesSemiconductor DeviceSemiconductorsIi-vi SemiconductorElectronic DevicesPhotodetectorsHigh-performance Res2Rhenium DisulfideCompound SemiconductorElectrical EngineeringHigh MobilityOptoelectronic MaterialsPhotoelectric MeasurementOxygen Plasma TreatmentApplied PhysicsThin FilmsHigh‐performance 2DO2 Plasma TreatmentOptoelectronics
A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.
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