High Sensitivity Semiconductor NO[sub 2] Gas Sensor Based on Mesoporous WO[sub 3] Thin Film

Abstract

A gas sensor based on mesoporous thin film with low operating temperatures and its sensing characteristics are reported. The mesoporous thin film exhibits regular pores with an average pore size of 5 nm and specific surface area of 151 m2/g. Excellent sensing properties are found upon exposure to 3 ppm of at 35-100°C for mesoporous thin film. The sensor response is 180 for 3 ppm at 100°C. The ability to sense at such low temperatures is attributed to the large surface area (151 m2/g) that offers many active sites for reaction with molecules. © 2003 The Electrochemical Society. All rights reserved.