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Effect of Electron Transporting Layer on Bismuth-Based Lead-Free Perovskite (CH<sub>3</sub>NH<sub>3</sub>)<sub>3</sub> Bi<sub>2</sub>I<sub>9</sub> for Photovoltaic Applications
311
Citations
37
References
2016
Year
Bismuth-based Lead-free PerovskiteEngineeringHybrid PerovskiteHalide PerovskitesChemistryPhotovoltaicsSemiconductorsMethylammonium Iodo BismuthateCharge Carrier TransportMaterials ScienceElectrical EngineeringInorganic ElectronicsElectron Transporting LayerSolution-processed PerovskitePerovskite MaterialsLead-free PerovskitesPerovskite Solar CellPhotovoltaic ApplicationsApplied PhysicsThin FilmsSolar CellsFunctional MaterialsSolar Cell Materials
Methylammonium iodo bismuthate ((CH3NH3)3Bi2I9) (MBI) perovskite is a promising alternative to rapidly progressing hybrid organic-inorganic lead perovskites because of its better stability and low toxicity compared to lead-based perovskites. Solution-processed perovskite fabricated by single-step spin-coating and subsequent heating produced polycrystalline films of hybrid perovskite (CH3NH3)3Bi2I9), whose morphology was influenced drastically by the nature of substrates. The optical measurements showed a strong absorption band around 500 nm. The devices made on anatase TiO2 mesoporous layer showed good performance with current density over 0.8 mA cm(-2) while the devices on brookite TiO2 layer and planar (free of porous layer) was inefficient. However, all the MBI devices were stable to ambient conditions for more than 10 weeks.
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