Efficient and Hysteresis-Free Field Effect Modulation of Ambipolarly Doped Vanadium Dioxide Nanowires

Abstract

The metal-insulator transition (MIT) in vanadium dioxide occurs in about 0.1 ps around room temperature, which makes it an attractive basis for ultrafast field-effect transistors. The development of VO${}_{2}$-based devices has been stymied, though, by inefficient and hysteretic gate modulation. The authors demonstrate ambipolar doping of single-crystalline VO${}_{2}$ nanowires to yield $p$-type material as desired, plus a hybrid gating method for strong field effects without hysteresis. Their achievements afford progress in both applications and basic studies of the MIT in this system.