Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects

Abstract

Computer hardware is moving away from volatile DRAM and SRAM toward nonvolatile universal memory (NVRAM). In next-generation NVRAM technologies, binary information is typically stored using one of three quantities: the direction of magnetization or electric polarization, or the magnitude of resistance. The authors prove experimentally that the sign of the magnetoelectric coefficient \ensuremath{\alpha} of a multiferroic material can also be used effectively for binary encoding. The virtues of this kind of memory include high speed, low power consumption, parallel reading, a simple structure for easy fabrication, and a diversity of available materials.