Synthesis of atomically thin GaSe wrinkles for strain sensors

Abstract

A wrinkle-based thin-film device can be used to develop optoelectronic devices, photovoltaics, and strain sensors. Here, we propose a stable and ultrasensitive strain sensor based on two-dimensional (2D) semiconducting gallium selenide (GaSe) for the first time. The response of the electrical resistance to strain was demonstrated to be very sensitive for the GaSe-based strain sensor, and it reached a gauge factor of–4.3, which is better than that of graphene-based strain sensors. The results show us that strain engineering on a nanoscale can be used not only in strain sensors but also for a wide range of applications, such as flexible field-effect transistors, stretchable electrodes, and flexible solar cells.