A Fully Integrated Watt-Level Power Transfer System With On-Chip Galvanic Isolation in Silicon Technology

Abstract

This paper presents the design and experimental characterization of a power transfer system performing a dc-dc conversion with on-chip galvanic isolation. The converter is operated in the VHF band, which enables fully integration of all the required components in silicon technology. It consists of only two silicon dice, i.e., a power oscillator with an on-chip isolation transformer and a full-bridge rectifier, which are fabricated in 0.35-μm BCD and 0.13-μm CMOS technology, respectively. A thick SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer was used, which guarantees galvanic isolation between the transformer windings. A co-design procedure for the system building blocks is proposed, which aims at optimizing the dc-dc converter performance in terms of power efficiency at a given power density. Thanks to the adopted approach, a maximum output power up to 980 mW is demonstrated with a power efficiency of 29.6%. This paper outperforms previously reported integrated inductive step-up converters in terms of power per silicon area (up to 105 mW/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), while providing on-chip galvanic isolation without any discrete devices or post-processing steps.