Investigating short channel effects and performance parameters of double gate junctionless transistor at various technology nodes

Abstract

The short channel effects and performance parameters of double gate junctionless transistor are analyzed at different channel lengths. In this paper various graphs like Drain Induced Barrier Lowering, Subthreshold Swing, On current, Off current, on/off ratio and Threshold voltage variations at different channel lengths are discussed. Junctionless transistor is a new technology device with no junctions and with the easy fabrication when scaling is done. Reasons for variations of parameters at different channel lengths (20nm, 25nm and 30nm) are discussed. Double Gate Junctionless transistor provides better control over the carriers flowing in the device, as front gate and back gate controls the flow of current. We need a heavy doping to analyse the parameters as there is only one type of doping which is done in junctionless transistor. Doping is kept at 1.5E+19cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . Doping is responsible for the current to flow in the device.