Publication | Open Access
Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc
42
Citations
19
References
2015
Year
Wide-bandgap SemiconductorPassive LossEngineeringLocal DiffusionRf SemiconductorOptical PropertiesNanoelectronicsGuided-wave OpticCompound SemiconductorPlanar Waveguide SensorMaterials ScienceElectrical EngineeringPhysicsSemiconductor Device FabricationMicroelectronicsGeneric Inp FoundryLow-loss Passive WaveguidesRecord Quality FactorApplied PhysicsOptoelectronics
Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.4 dB/cm. We confirm this value by fabrication of a 73 mm long spiral ring resonator, with a record quality factor of 1.2 million and an extinction ratio of 9.7 dB.
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