High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C - Concepedia

Concepedia

Publication | Open Access

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

DOI Full Paper Access

89

Citations

22

References

2016

Year

Won-Gi Kim, Young Jun Tak, Byung Du Ahn, Tae Soo Jung, Kwun‐Bum Chung, Hyun Jae Kim

Scientific Reports

References

	Year	Citations

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