Defect engineering of two-dimensional transition metal dichalcogenides

TLDR

Two‑dimensional transition metal dichalcogenides (TMDs) are layered materials whose structural defects can either enhance or impair their physico‑chemical properties. The review aims to provide a comprehensive understanding of structural defects in semiconducting TMDs to advance defect engineering. It summarizes defect dimensionalities, synthesis pathways, and their effects on properties and applications. Progress has been made, yet the field remains in its early stages.

Abstract

Two-dimensional transition metal dichalcogenides (TMDs), an emerging family of layered materials, have provided researchers a fertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applications of TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defects is important in order to move forward the field of Defect Engineering in TMDs. Finally, we also provide our perspective on the challenges and opportunities in this emerging field.