Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits

Abstract

In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.