Publication | Closed Access
Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes
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Citations
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References
2016
Year
Optical MaterialsEngineeringCore–shell LedsOptoelectronic DevicesLuminescence PropertySemiconductorsElectron MicroscopyOptical PropertiesLight-emitting DiodesNanophotonicsMaterials SciencePhotonicsElectrical EngineeringPhotoluminescencePhysicsOptoelectronic MaterialsNew Lighting TechnologyAluminum Gallium NitrideCategoryiii-v SemiconductorIngan/gan Quantum-wellSolid-state LightingDirect CorrelationsApplied PhysicsGan Power DeviceOptoelectronics
Abstract Three-dimensional (3D) InGaN/GaN quantum-well (QW) core–shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core–shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).
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