Japanese Journal of Applied Physics · 2016 · 24 citations · 21 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesOptoelectronic MaterialsQuantum WellsSemiconductor Device MaterialsSemiconductor PhysicsInternal Quantum EfficiencyLight-emitting DevicesOptical PropertiesPhotoluminescencePhotoluminescence SpectroscopyQuantum EfficiencyRecombination MechanismsScanning Transmission Electron Microscopy
Abstract Three-dimensional (3D) InGaN/GaN quantum-well (QW) core–shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core–shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).
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Luminescence properties of defects in GaN
M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations