Publication | Closed Access
One-Step Electrochemical Deposition of Hierarchical CuS Nanostructures on Conductive Substrates as Robust, High-Performance Counter Electrodes for Quantum-Dot-Sensitized Solar Cells
90
Citations
33
References
2014
Year
EngineeringElectrode-electrolyte InterfacePlasmon-enhanced PhotovoltaicsChemistryNanoengineeringPolysulfide ReductionOne-step Electrochemical DepositionCuprous SulfideSolar Cell MaterialsHybrid MaterialsElectrode Reaction MechanismIdeal Counter ElectrodeMaterials ScienceElectrical EngineeringSurface ElectrochemistryQuantum-dot-sensitized Solar CellsHierarchical Cus NanostructuresElectrochemical ProcessEnergy MaterialElectrochemistryElectrochemical Surface Science
An ideal counter electrode, with high electrocatalytic activity, high performance stability, and applicable fabrication simplicity, is essential to give full play to the advantages of quantum-dot-sensitized solar cells (QDSSCs) such as high theoretical efficiency and simple synthetic procedure. Herein, we report a facile one-step electrochemical deposition approach for the growth of hierarchical covellite (CuS) nanostructures on conductive glass substrates. The as-synthesized copper sulfide can be employed directly as a robust, low-cost, and high-efficiency counter electrode without any post-treatments for QDSSCs filled with aqueous sulfide/polysulfide (S2–/Sn2–) electrolyte. The morphology and structure of the well-crystalline, strongly substrate-adhesive hierarchical CuS nanostructured film have been studied by X-ray and electron-based characterizations. QDSSC using this newly synthesized CuS as counter electrode achieves a higher power conversion efficiency of 4.32% than the one applying cuprous sulfide (Cu2S) on brass substrate (4.08%) or platinum counter electrode (2.85%). Furthermore, this CuS counter electrode shows a high and consistent electrocatalytic activity toward polysulfide reduction confirmed by the electrochemical measurements, destining the improved photovoltaic performance and superior stability of the corresponding QDSSC device.
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