Publication | Open Access
Ferromagnetism and Crossover of Positive Magnetoresistance to Negative Magnetoresistance in Na-Doped ZnO
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Citations
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References
2015
Year
EngineeringPositive MagnetoresistanceMagnetoresistanceMagnetismNanoelectronicsP-type ConductivityMaterials SciencePhysicsOxide ElectronicsMagnetic MaterialNa-doped ZnoSpintronicsFerromagnetismNatural SciencesApplied PhysicsCondensed Matter PhysicsHydrothermal ProcessThin FilmsNegative Magnetoresistance
Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.
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