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MOCVD of CoAl<sub>2</sub>O<sub>4</sub> Thin Films from {Co[Al(O<i><sup>i</sup></i>C<sub>3</sub>H<sub>7</sub>)<sub>4</sub>]<sub>2</sub>} as Precursor
30
Citations
28
References
2007
Year
Materials EngineeringMaterials ScienceChemical EngineeringInorganic ChemistryEngineeringOxide ElectronicsSurface ScienceMass SpectrometryCoal2o4 Thin FilmsChemistryThin FilmsChemical DepositionMolecular PropertiesChemical Vapor DepositionThin Film Processing
A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(OiC3H7)4]2} is presented. Molecular properties of {Co[Al(OiC3H7)4]2} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV−vis, and SIMS measurements.
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