Wafer-Scale Production of Uniform InAs_<i>y</i>P_1–<i>y</i> Nanowire Array on Silicon for Heterogeneous Integration

TLDR

One‑dimensional crystal growth enables epitaxial integration of compound semiconductors on silicon by laterally relieving large lattice‑mismatch strain. The study aims to directly heteroepitaxially grow a mixed anion ternary InAsyP1–y nanowire array across an entire 2‑inch silicon wafer. The authors achieved this by growing the nanowire array on a 2‑inch wafer, attaining unprecedented spatial, structural, and uniformity, with aspect ratio >100 and area density >5 × 10⁸ cm⁻². The resulting nanowires exhibit aspect ratio >100, area density >5 × 10⁸ cm⁻², and enable n‑type InAsyP1–y/p‑type Si heterojunction solar cells with 3.6 % efficiency, demonstrating large‑scale production potential for optoelectronic integration.

Abstract

One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1–y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 108/cm2). Heterojunction solar cells consisting of n-type InAsyP1–y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.