Publication | Closed Access
p‐Type MoS<sub>2</sub> and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect
167
Citations
40
References
2016
Year
EngineeringInorganic PhotochemistryExcellent Rectification RatioPhoto-electrochemical CellPiezophototronic EffectSemiconductorsNanoelectronicsPiezoelectric MaterialCompound SemiconductorMaterials ScienceElectrical EngineeringPerformance EnhancementPhotoluminescencePhotochemistryNm Optical IrradiationOxide ElectronicsOxide SemiconductorsPiezoelectricityN‐type Zno DiodeApplied PhysicsP-n DiodeOptoelectronics
A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.
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