Formation of Epitaxial Pb(Zr, Ti)O<sub>3</sub> Film by CVD

Abstract

Pbx(Zry, Ti1-y)O3 films were prepared by CVD using Pb(DPM)2, Zr(O⋅t-Bu)4, Ti(O⋅i-Pr)4, and O2 as starting materials. Metal alkoxide was selected for both Ti and Zr starting materials, which were effective for controlling Ti and Zr contents in the films. PZT films with the composition, x=ca.1.0 and y=ca. 0.5, were grown reproducibly with almost complete epitaxy on (100) MgO substrates. Deposition rate of film was about 200-300nm/min.