Publication | Open Access
Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C
19
Citations
33
References
2016
Year
Materials ScienceSemiconductor TechnologyEngineeringSurface ScienceApplied PhysicsSemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthSilicon Epitaxy
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