An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications

Abstract

This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in a 65 nm CMOS technology. The amplifier adopts five-stage cascode topology with L-type input matching and T-type output matching. By distributing the peak gains of first four stages at two frequency points, the LNA achieves a flat gain response over a wide bandwidth. The measurement results show that the amplifier features a peak gain of 16.7 dB at 104 GHz, a minimum NF of 7.2 dB, and a 3 dB bandwidth of 21.5 GHz. The LNA consumes 48.6 mW and occupies a compact core area of 0.05 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .