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Diffusion Limited Photoluminescence Quantum Yields in 1-D Semiconductors: Single-Wall Carbon Nanotubes
192
Citations
44
References
2010
Year
EngineeringCarbon NanotechnologySingle-wall Carbon NanotubesExcitation Energy TransferLuminescence PropertySemiconductor NanostructuresSemiconductors1-D SemiconductorsCarbon-based MaterialCarbon NanotubesPhotophysical PropertyCompound SemiconductorExcitonic SPhotoluminescencePhysicsNanotechnologyNanophysicsNanomaterialsApplied PhysicsInverse Diffusion CoefficientNanotubesOptoelectronicsPhotoluminescence Quantum Yields
Photoluminescence quantum yields and nonradiative decay of the excitonic S(1) state in length fractionated (6,5) single-wall carbon nanotubes (SWNTs) are studied by continuous wave and time-resolved fluorescence spectroscopy. The experimental data are modeled by diffusion limited contact quenching of excitons at stationary quenching sites including tube ends. A combined analysis of the time-resolved photoluminescence decay and the length dependence of photoluminescence quantum yields (PL QYs) from SWNTs in sodium cholate suspensions allows to determine the exciton diffusion coefficient D = 10.7 ± 0.4 cm(2)s(-1) and lifetime τ(PL) for long tubes of 20 ± 1 ps. PL quantum yields Φ(PL) are found to scale with the inverse diffusion coefficient and the square of the mean quenching site distance, here l(d) = 120 ± 25 nm. The results suggest that low PL QYs of SWNTs are due to the combination of high-diffusive exciton mobility with the presence of only a few quenching sites.
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