Preparation of PbTiO<sub>3</sub> Thin Films by MOCVD under Atmospheric Pressure

Abstract

PbTiO3 films were prepared by simultaneous deposition of TiO2 and PbO on heated substrates under atmospheric pressure. Titanium tetra-isopropoxide and tetra-ethyl lead were used as source materials. For estimating the optimum condition on the preparation of PbTiO3 films, the deposition behavior of TiO2 and PbO was examined independently. The films obtained at 500°-600°C consisted of PbTiO3 of perovskite structure. The rate of film deposition at 600°C was 200Å/min, about ten times faster than that by conventional sputtering method. Si(100), sapphire (0001) and MgO(100) were used as substrates, and the films on MgO(100) showed strong c-axis orientation. The dielectric constants of the films on Si were 100-130, in agreement with the value of ceramics or sputtered films.