Publication | Closed Access
Generation and transport of valley-polarized current in transition-metal dichalcogenides
225
Citations
30
References
2014
Year
Categoryquantum ElectronicsEngineeringReciprocal SpaceSpintronic MaterialSemiconductorsQuantum MaterialsQuantum MatterTmdc TransistorSpin-orbit EffectsQuantum SciencePhysicsLayered MaterialCondensed Matter TheoryQuantum MagnetismTransition Metal ChalcogenidesSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum DevicesValley IndexTopological HeterostructuresTransition-metal Dichalcogenides
In two-dimensional crystals of transition-metal dichalcogenides (TMDC) having strong spin-orbit interaction such as monolayer ${\mathrm{WSe}}_{2}$, quantum states can be labeled by a valley index $\ensuremath{\tau}$ defined in the reciprocal space and the spin index $s$. We developed a first-principles theoretical formalism to both qualitatively and quantitatively predict nonequilibrium quantum transport of valley-polarized currents. We propose a ${\mathrm{WSe}}_{2}$ TMDC transistor to selectively deliver net valley- and spin-polarized current ${I}_{\ensuremath{\tau},s}$ to the source or drain by circularly polarized light under external bias. Due to the lack of translational symmetry of the real-space device, we predict a depolarization effect that increases with the decrease of the channel length of the transistor.
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