Origin of negative magnetoresistance of GaAs/(Ga,Mn)As core-shell nanowires

Abstract

We explore the anisotropy of the magnetoresistance of individual GaAs/(Ga,Mn)As core-shell nanowires which feature a strong negative magnetoresistance (NMR) and a very large magnetic anisotropy field. Our analysis of the magnetoresistance shows that the resistance anisotropy is dominated by the effective magnetic field and that the origin of the NMR is related to spin scattering rather than to weak localization in (Ga,Mn)As core-shell nanowires.