Physical Review Letters · 2014 · 237 citations · 40 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsPhotonicsLaser DiodesLaser PhysicsNonlinear OpticsOptical SourcesPolarization OpticsSemiconductor LasersExciton-polaritonsLaser LinewidthLaser ThresholdMicrocavity LasersPolariton PhysicsPolarization PropertiesSpatial CoherenceThreshold Behavior
Room temperature electrically pumped inversionless polariton lasing is observed from a bulk GaN-based microcavity diode. The low nonlinear threshold for polariton lasing occurs at 169 A/cm(2) in the light-current characteristics, accompanied by a collapse of the emission linewidth and small blueshift of the emission peak. Measurement of angle-resolved luminescence, polariton condensation and occupation in momentum space, and output spatial coherence and polarization have also been made. A second threshold, due to conventional photon lasing, is observed at an injection of 44 kA/cm(2).
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Bose–Einstein condensation of exciton polaritons
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Band parameters for nitrogen-containing semiconductors
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