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An Improved LiF:Mg,Cu,P Chip with a Low Residual Signal

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1999

Year

Abstract

An improved preparation procedure has been adopted by changing Cu concentration and sintering temperature to lower the residual signal of LiF:Mg,Cu,P. The sensitivity of LiF:Mg,Cu,P can reach 65 times as high as that of TLD-100, while its residual signal is higher than 1% following a 240(C for 12 s readout. By the improved preparation procedure, the residual signal of LiF:Mg,Cu,P can be 0.4% at the expense of lowering sensitivity to 41 times as high as that of TLD-100. This negligible residual signal enables LiF:Mg,Cu,P TLD to be workable with an 'unannealed' regime. The dependence of glow curve structure, TL sensitivity and residual signal on Cu concentration and sintering temperature are described.