Thermal Stability of the Basic Structures of SiC

Abstract

With the aid of the sublimation method and the method with silicon melts, the relationship between the basic polytypes of SiC and their growth temperatures has been studied experimentally in the range from 1600°C to 2600°C under the condition of low supersaturation. From the results of these experiments, it is concluded that 3 C, 4 H, and 6 H are stable up to 1600°C, at about 1800°C, and between 2200°C and 2600°C, respectively. The 15 R type has been found as stable as 6 H at about 2200°C, and if a stable region exists for this type, it is considered to be between 2000°C and 2200°C.