Free-Standing, Single-Crystal Cu₃Si Nanowires

Abstract

Free-standing, single-crystal Cu3Si nanowires were synthesized by annealing a Cu/Ge bilayer film on a SiO2/Si substrate. The grown nanowires exhibit well-defined facets, were characterized using a combination of high-resolution microscopy and local area diffraction, and were shown to be comprised exclusively of the well-known η″ phase. Preliminary electrical measurements indicate that the metallic Cu3Si NWs are excellent conductors with a resistivity of less than 30 μΩ·cm and lower than that found for the corresponding thin film materials.