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Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies
305
Citations
29
References
2011
Year
Materials ScienceElectrical EngineeringHigh Temperature MaterialsEngineeringCu DeficienciesThermal PropertyThermoelectricsThermoelectric MaterialThermophysical PropertyThermodynamicsChemistryPyroelectricityThermal EngineeringFunctional MaterialsLayered Oxyselenides BicuseoThermal ConductivityElectrochemistryPristine Bicuseo
A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.
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