Effect of Magnetic Field on the Electronic Transport in Trilayer Graphene

Abstract

The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a strong function of temperature. The dependence of resistance on the magnetic field can be explained by the splitting of Landau levels (LLs). Our results reveal that the energy gap in the trilayer graphene is thermally activated and increases with √B.