Circuit Simulation Using EPC Device Models

Abstract

EPC’s enhancement mode gallium nitride (eGaN®) power transistors are a new generation of power switches offering unsurpassed performance over silicon power MOSFETs in switching speed and conduction losses with superior thermal characteristics. An accurate circuit and device model is a valuable tool for developing new topologies, building successful designs, and shortening time to market. This article describes the status and use of EPC device models, and illustrates some important considerations when incorpo rating EPC eGaN devices into a circuit model.