Rashba splitting and relativistic energy shifts in In/Si(111) nanowires

Abstract

A numerically efficient methodology that allows for relativistic calculations including spin-orbit coupling for spatially anisotropic potentials is employed to study the energetics and electronic properties of In/Si(111)($4\ifmmode\times\else\texttimes\fi{}1$)/($8\ifmmode\times\else\texttimes\fi{}2$) nanowires within density-functional theory. For the subtle total energy balance between the metallic In zigzag chain structure observed at room temperature and the insulating In hexagons that form below the critical temperature, scalar-relativistic corrections to the kinetic energy are clearly far more important than the spin-orbit coupling. On the other hand, a relativistic treatment including spin-orbit coupling is required to describe correctly the electronic band structure that shows a large, strongly anisotropic $k$-point-dependent spin splitting of the In-related states at the $X$ point of the surface Brillouin zone. Suitably combined with the metal-insulator transition, the resulting quasi-1D Rashba effect may be used for spin filtering.