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Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules
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2006
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Semiconductor TechnologyPhotonicsElectrical EngineeringEngineeringApplied PhysicsEye DiagramsAvailable Gaas DevicesOptoelectronic DevicesIntegrated CircuitsStandard Receiver ModulesPhotonic Integrated CircuitGe DetectorsMicroelectronicsPhotoelectric MeasurementOptoelectronicsImage SensorSemiconductor Device
Ge-on-Si p-i-n photodetectors of sizes that are compatible with commercially-available receivers have been fabricated and tested. A dark current density of 28.7 mA/cm 2 at - 2V bias has been measured at room temperature; when heated to 85ºC, the measured dark current increases by a factor of nine. A responsivity of 0.59 A/W at 850 nm has been measured from these Ge detectors, which matches or exceeds values obtained from commercially available GaAs devices. We have measured bandwidths approaching 9 GHz at -2V bias from 50 µm diameter Ge detectors, and have observed eye diagrams comparable to those obtained from GaAs-based receivers at 4.25 Gb/s.