Temperature dependent Raman scattering studies of three dimensional topological insulators Bi2Se3

Abstract

We investigate the temperature dependent (83 K≤T≤523 K) frequency shift of 2Ag1 and 1Eg2 phonon modes in the three dimensional topological insulator Bi2Se3, using Raman spectroscopy. The high quality single crystals of Bi2Se3 were grown using a modified Bridgman technique and characterized by Laue diffraction and high resolution transmission electron microscopy. A significant broadening in the line shape and red-shift in the frequencies were observed with increase in temperature. Polarized Raman scattering measurement shows a strong polarization effect of Ag1 and Ag2 phonon modes which confirms the good quality single crystals of Bi2Se3. Temperature co-efficient for A1g1, Eg2, and A1g2 modes was estimated to be −1.44 × 10−2, −1.94 × 10−2, and −1.95 × 10−2 cm−1∕K, respectively. Our results shed light on anharmonic properties of Bi2Se3.