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Epitaxial Thin Films of ATiO<sub>3–<i>x</i></sub>H<sub><i>x</i></sub> (A = Ba, Sr, Ca) with Metallic Conductivity
104
Citations
23
References
2012
Year
Materials ScienceChemical EngineeringEpitaxial GrowthEngineeringPerovskite ModuleOxide ElectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsTitanium PerovskiteSemiconductor MaterialThin Film Process TechnologyEpitaxial Thin FilmsThin FilmsMetallic ConductivityFunctional MaterialsThin Film Processing
Epitaxial thin films of titanium perovskite oxyhydride ATiO(3-x)H(x) (A = Ba, Sr, Ca) were prepared by CaH(2) reduction of epitaxial ATiO(3) thin films deposited on a (LaAlO(3))(0.3)(SrAl(0.5)Ta(0.5)O(3))(0.7) substrate. Secondary ion mass spectroscopy detected a substantial amount and uniform distribution of hydride within the film. SrTiO(3)/LSAT thin film hydridized at 530 °C for 1 day had hydride concentration of 4.0 × 10(21) atoms/cm(3) (i.e., SrTiO(2.75)H(0.25)). The electric resistivity of all the ATiO(3-x)H(x) films exhibited metallic (positive) temperature dependence, as opposed to negative as in BaTiO(3-x)H(x) powder, revealing that ATiO(3-x)H(x) are intrinsically metallic, with high conductivity of 10(2)-10(4) S/cm. Treatment with D(2) gas results in hydride/deuteride exchange of the films; these films should be valuable in further studies on hydride diffusion kinetics. Combined with the materials' inherent high electronic conductivity, new mixed electron/hydride ion conductors may also be possible.
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