Simultaneous measurements of heat capacity, electrical resistivity, and hemispherical total emittance by a pulse heating technique: Vanadium, 1500 to 2100 K

Abstract

Simultaneous measurements of heat capacity, electrical resistivity, and hemispherical total emittance of vanadium in the temperature range 1500 to 2100 K by a subsecond duration, pulse heating technique are described. The results are expressed by the relations: <i>c</i> _<i>p</i> = 56.34 - 3.839 × 10^-2 <i>T</i> + 1.563 × 10^-5 <i>T</i> ² <i>ρ</i> = 8.794 + 6.282 × 10^-2 <i>T</i> - 6.804 × 10^-6 <i>T</i> ² where <i>c</i> _<i>p</i> is in J · mol^-1 · K^-1, <i>ρ</i> is in 10^-8 Ω · m, and <i>T</i> is in K. The values for the hemispherical total emittance are: 0.313 at 1900 K and 0.332 at 2000 K. Estimated inaccuracies of the measured properties are: 3 percent for heat capacity, 0.5 percent for electrical resistivity and 5 percent for hemispherical total emittance.