Journal of the Ceramic Society of Japan · 1994 · 12 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSurface ScienceThin FilmsEpitaxial GrowthThin-film DepositionEpitaxial Film GrowthEpitaxial MaterialsEpitaxial Thin FilmsEpitaxial Thin-film GrowthOxygen Partial Pressure EffectsTemperature Effects On DepositionTotal Pressure
Epitaxially grown Pb(Zr, Ti)O3 [PZT] films were deposited on (100) MgO substrates by CVD and the effects of deposition parameters on the epitaxial growth of the films were investigated. The films consisting of PZT single phases were deposited from about 0.4 to 0.5 of Pb/(Pb+Zr+Ti) and the epitaxially grown film was obtained near 0.5 of Pb/(Pb+Zr+Ti). Epitaxially grown PZT films were deposited over wide deposition conditions; 600-700°C of the deposition temperature, 1.1-6.7kPa of the total gas pressure and 64Pa-1.1kPa of the oxygen partial pressure.