Deposition Condition of Epitaxially Grown PZT Films by CVD

Abstract

Epitaxially grown Pb(Zr, Ti)O3 [PZT] films were deposited on (100) MgO substrates by CVD and the effects of deposition parameters on the epitaxial growth of the films were investigated. The films consisting of PZT single phases were deposited from about 0.4 to 0.5 of Pb/(Pb+Zr+Ti) and the epitaxially grown film was obtained near 0.5 of Pb/(Pb+Zr+Ti). Epitaxially grown PZT films were deposited over wide deposition conditions; 600-700°C of the deposition temperature, 1.1-6.7kPa of the total gas pressure and 64Pa-1.1kPa of the oxygen partial pressure.