A Schrödinger-Poisson Solver for Modeling Carbon Nanotube FETs

Abstract

We present details of a coupled Schrodinger-Poisson solver for modeling quantum transport efiects in carbon nanotube fleld-efiect transistors. The Poisson solution is efiected using a two-dimensional flnite difierence al- gorithm in a coaxial structure with azimuthal symme- try. The Schrodinger solution is implemented by the scattering matrix method, and the resultant, spatially unbounded wavefunctions, deflned on the nanotube sur- face, are normalized to the ∞ux computed by the Lan- dauer formula. The solver illustrates the need for de- tailed modeling of the nanotube due to the impact of interference efiects and evanescent modes on the carrier proflles. Non-equilibrium carrier distributions are pre- sented for particular cases.